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| ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=7.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package APPLICATIONS * DC - DC Converters * Power Management Functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMN3A04DN8TA ZXMN3A04DN8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units Top View DEVICE MARKING * ZXMN 3A04D PROVISIONAL ISSUE A - AUGUST 2001 1 ZXMN3A04DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL V D SS VGS LIMIT 30 20 7.6 6.0 5.8 25 2.5 25 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A Continuous Drain Current (V GS =10V; T A =25C)(b)(d) I D (V GS =10V; T A =70C)(b)(d) (V GS =10V; T A =25C)(a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25C (a)(d) Linear Derating Factor Power Dissipation at T A =25C (a)(e) Linear Derating Factor Power Dissipation at T A =25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range I DM IS I SM PD PD PD T j :T stg A A A W mW/C W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(d) Junction to Ambient (a)(e) Junction to Ambient (b)(d) SYMBOL R JA R JA R JA VALUE 100 70 60 UNIT C/W C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature. Refer to Transcient Thermal Inpedance graph. (d) For device with one active die (e) For device with two active die running at equal power. PROVISIONAL ISSUE A - AUGUST 2001 2 ZXMN3A04DN8 ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 20.5 41.5 0.95 V ns nC T J =25C, I S =6A, V G S =0V T J =25C, I F =6A, di/dt= 100A/s t d (o n ) tr t d(off) tf Qg Qg Qgs Qgd 5.5 8.7 33 8.5 19.4 35.7 5.5 7.0 ns ns ns ns nC nC nC nC V D S =15V,V G S =10V, I D =3.5A V D S =15V,V G S =5V, I D =3.5A V D D =15V, I D =6A R G =6.0, V G S =10V C i ss C o ss C rss 1800 289 178 pF pF pF V D S =25V, V G S =0V, f=1MHz V (BR)D SS I D SS I G SS V GS(th) R DS(on) g fs 17.5 1.0 0.02 0.03 30 0.5 100 V A nA V S I D =250A, V G S =0V V D S =30V, V G S =0V V G S =20V, V DS =0V I =250A, V DS = V G S D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V G S =10V, I D =12.6A V G S =4.5V, I D =10.6A V D S =15V,I D =6A NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - AUGUST 2001 3 ZXMN3A04DN8 PACKAGE DIMENSIONS DIM Millimetres Min A B C D E F G J K L 4.80 Max 4.98 Inches Min 0.189 Max 0.196 1.27 BSC 0.53 REF 0.36 3.81 1.35 0.10 5.80 0 0.41 0.46 3.99 1.75 0.25 6.20 8 1.27 0.05 BSC 0.02 REF 0.014 0.15 0.05 0.004 0.23 0 0.016 0.018 0.157 0.07 0.010 0.24 8 0.050 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. Suite 315 700 Veterans Memorial Highway Hauppauge USA Telephone: (631) 360-2222 Fax: (631) 360-8222 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c) Zetex plc 2001 www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - AUGUST 2001 4 |
Price & Availability of ZXMN3A04DN8
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